The pressure dependence of the band offsets in a GaInAs/InP multiple quantum well structure
作者： J.D. Lambkin , D.J. Dunstan , E.P. O'Reilly , B.R. Butler
DOI: 10.1016/0022-0248(88)90547-7
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摘要: Abstract The photoluminescence of a GaInAs/InP quantum well structure grown by MOCVD has been measured up to 70 kbar using miniature cryogenic diamond anvil cell. Together with measurements the bulk material, these data determine pressure dependence confinement energies. It is found that energies decrease pressure, and effect more marked in narrow wells. In order explain results terms barrier heights, effective masses, widths, it necessary include band offset. We find valence offset virtually independent while conduction decreases approximately 2.3±0.6 meV/kbar. This difference coefficients direct band-gaps GaInAs InP.
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