Thermally induced diffusion in GaInNAs/GaAs and GaInAs/GaAs quantum wells grown by solid source molecular beam epitaxy
作者： TK Ng , HS Djie , SF Yoon , T Mei , None
DOI: 10.1063/1.1825632
关键词: Atomic diffusion 、 Annealing (metallurgy) 、 Photoluminescence 、 Quantum well 、 Materials science 、 Molecular beam epitaxy 、 Crystal growth 、 Wide-bandgap semiconductor 、 Condensed matter physics 、 Gallium arsenide
摘要: The effects of the thermal annealing induced diffusion on photoluminescence (PL) a GaAs∕GaInAs∕GaAs∕GaInNAs∕GaAs quantum well (QW) structure grown by solid source molecular beam epitaxy are studied. PL experimental results in conjunction with numerical quantum-mechanical modeling that predicts changes QW confining potential group-III atomic diffusion, have been used to obtain values for coefficient. activation energies GaInAs∕GaAs (ED,GIA) were found be between 0.49to0.51eV, while GaInNAs∕GaAs (ED,GINA) showed comparable 0.6 0.67eV, as time increases from 10to30s. ED,GIA and ED,GINA attributed same interstitial mechanism.
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