Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics
作者： TK Ng , SF Yoon , SZ Wang , L-H Lin , Y Ochiai
DOI: 10.1063/1.1601297
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摘要: Variable temperature photoluminescence (PL) measurement of a thermal-annealed 6 nm GaInNAs/GaAs quantum well (QW) is carried out to understand its low-temperature carrier dynamic characteristics. It found that the effect localization, which remained after thermal anneal, due possibly center characterized by transition with activation energy 13.7 meV below e1 state. This result deduced from fitting integrated PL intensity versus data single-activation-energy model. A comparable value 11 was also obtained between low-energy (main localized state) and high-energy (e1 Gaussian functions used fit spectrum. The localization in QW further confirmed time-resolved measurements at 17 K, showed emission-energy-dependent decay time characteristic for regime (below 1.045 eV) nearly constant about 0.14 ns high-energy...
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