Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature
作者： TK Ng , Soon Fatt Yoon , SZ Wang , Wan Khai Loke , WJ Fan
DOI: 10.1116/1.1477425
关键词: Optoelectronics 、 Photoluminescence 、 Annealing (metallurgy) 、 Epitaxy 、 Quantum well 、 Blueshift 、 Wavelength 、 Nitrogen plasma 、 Gallium arsenide 、 Materials science
摘要: The photoluminescence (PL) characteristics of GaInNAs quantum wells (QWs) after high-temperature postgrowth annealing were studied. QWs grown using a radio-frequency nitrogen plasma source in conjunction with solid-source molecular-beam epitaxy system. It was found that at high temperature (840 °C) and long duration (10 min) results significant improvements to the PL QWs. shift GaInAs peak wavelength resulting from is dependent on In composition. suggested dominant mechanisms give rise blueshift high-In composition are residual-strain-induced GaAs/GaInNAs/GaAs interface interdiffusion, defect-assisted diffusion-related effects, both which originate growth process.
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