Characterization of selective quantum well intermixing in 1.3 μm GaInNAs/GaAs structures
作者： HD Sun , Roberto Macaluso , MD Dawson , F Robert , AC Bryce
DOI: 10.1063/1.1590413
关键词: Sputtering 、 Band gap 、 Crystallographic defect 、 Blueshift 、 Analytical chemistry 、 Gallium arsenide 、 Photoluminescence 、 Quantum well 、 Secondary ion mass spectrometry 、 Materials science
摘要: Rapid thermal annealing combined with SiO2 caps deposited on the surface of samples by different techniques is used to selectively disorder 1.3 μm GaInNAs/GaAs multiquantum wells which have been preannealed in situ stage blueshift saturation. After under specific conditions, a shift band gap over 170 meV has obtained sputtered SiO2-capped samples, while uncapped and plasma enhanced chemical vapor demonstrated negligible shift. Quantum well intermixing originates from compositional interdiffusion due generation point defects ion bombardment during sputtering process. Secondary mass spectrometry confirmed that was caused group III atoms (In Ga) between quantum barriers. Detailed photoluminescence excitation spectroscopy were performed study optical properties both intermixed nonintermix...
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