Quantum-well intermixing influence on GaInNAs/GaAs quantum-well laser gain: theoretical study
作者： Y N Qiu , H D Sun , J M Rorison , S Calvez , M D Dawson
DOI: 10.1088/0268-1242/23/9/095010
关键词:
摘要: The effect of quantum-well intermixing on the material gain a GaInNAs/GaAs laser is investigated theoretically. diffusion gallium and indium atoms in intermixed sample assumed their compositional profiles are modelled using Fick's law. band-anti-crossing model used to calculate band structure GaInNAs quantum well, which appropriate for this non-randomly-alloyed system. calculated results show good agreement with observed photoluminescence excitation both non-intermixed samples, confirms model. It found that strain gradient, variation gap degeneracy between heavy light holes main factors determining quantized energy levels well. With increase length, differential decrease due conduction effective mass rapid dipole moments. These characteristics effects will be useful design integrated photonic devices based material.
harvard.edu
strath.ac.uk
bristol.ac.uk
researchgate.net 
sci-hub.se 参考文章(31)
Brian Tuck, Atomic Diffusion in III-V Semiconductors ,(1988)
R. Chtourou, F. Bousbih, S. Ben Bouzid, F. F. Charfi, J. C. Harmand, G. Ungaro, L. Largeau, Effect of nitrogen and temperature on the electronic band structure of GaAs1−xNx alloys Applied Physics Letters. ,vol. 80, pp. 2075- 2077 ,(2002) , 10.1063/1.1462864
Michael C. Y. Chan, Charles Surya, P. K. A. Wai, The effects of interdiffusion on the subbands in GaxIn1−xN0.04As0.96/GaAs quantum well for 1.3 and 1.55 μm operation wavelengths Journal of Applied Physics. ,vol. 90, pp. 197- 201 ,(2001) , 10.1063/1.1370110
M.C.Y. Chan, C. Surya, P.K.A. Wai, Interdiffusion of GaInNAs-GaAs quantum wells ieee hong kong electron devices meeting. pp. 17- 20 ,(2001) , 10.1109/HKEDM.2001.946909
K.D. Choquette, J.F. Klem, A.J. Fischer, O. Blum, A.A. Allerman, I.J. Fritz, S.R. Kurtz, W.G. Breiland, R. Sieg, K.M. Geib, J.W. Scott, R.L. Naone, Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um Electronics Letters. ,vol. 36, pp. 1388- 1390 ,(2000) , 10.1049/EL:20000928
J.C.L. Yong, J.M. Rorison, I.H. White, 1.3-/spl mu/m quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: a theoretical study IEEE Journal of Quantum Electronics. ,vol. 38, pp. 1553- 1564 ,(2002) , 10.1109/JQE.2002.805100
S.B. Healy, E.P. O'Reilly, A. Lindsay, Influence of cluster states on band dispersion in bulk and quantum well (ultra-)dilute nitride semiconductors IEE Proceedings - Optoelectronics. ,vol. 151, pp. 397- 401 ,(2004) , 10.1049/IP-OPT:20040875
Calvin Yi-Ping Chao, Shun Lien Chuang, Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells. Physical Review B. ,vol. 46, pp. 4110- 4122 ,(1992) , 10.1103/PHYSREVB.46.4110
I. Vurgaftman, J. R. Meyer, L. R. Ram-Mohan, Band parameters for III–V compound semiconductors and their alloys Journal of Applied Physics. ,vol. 89, pp. 5815- 5875 ,(2001) , 10.1063/1.1368156
I. Vurgaftman, J. R. Meyer, Band parameters for nitrogen-containing semiconductors Journal of Applied Physics. ,vol. 94, pp. 3675- 3696 ,(2003) , 10.1063/1.1600519