Interdiffusion of GaInNAs-GaAs quantum wells

作者: M.C.Y. Chan , C. Surya , P.K.A. Wai

DOI: 10.1109/HKEDM.2001.946909

关键词:

摘要: The optical gain spectra for interdiffused Ga/sub x/In/sub 1-x/N/sub 0.04/As/sub 0.96/-GaAs single quantum wells are studied theoretically using Fick's law and the Fermi golden rule. Due to well interdiffusion, peak shift of peaks vary with diffusion lengths. results show that interdiffusion technique can be used tune operating wavelength multi-wavelength laser diode applications without degradation device performance.

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