Thermal annealing effect on 1.3-μm GaInNAs/GaAs quantum well structures capped with dielectric films
作者： HF Liu , CS Peng , Jari Likonen , J Konttinen , VDS Dhaka
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摘要: Two kinds of dielectric films, Si/sub 3/N/sub 4/ and SiO/sub 2/, deposited onto the surface 1.3-/spl mu/m GaInNAs/GaAs quantum well (QW) structures were studied upon post-growth thermal annealing. The blue-shift in photoluminescence (PL) as a function annealing time showed distinct dependence on selection films. It was found that cap layer inhibits under specific conditions inhibition effect increases with thickness cap; while 2/ enhances PL blue-shift. X-ray diffraction (XRD) secondary-ion-mass-spectrometry (SIMS) indicated enhanced from 2/-capped sample caused by two factors: interdiffusion Ga In atoms across QW interfaces decrease N-Ga ion density (and hence N) material. Compared caps, layers can inhibit both these factors. Time-resolved decay measurements at room temperature performed to study optical properties uncovered 4/-capped samples.
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