Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal–insulator–semiconductor structures with Si, In0.53Ga0.47As, and InP
作者： I Mártil , A Del Prado , E San Andrés , G González Dıáz , FL Martınez
DOI: 10.1063/1.1592625
关键词: Thin film 、 Semiconductor device 、 Optoelectronics 、 Gallium arsenide 、 Hydrogen 、 Semiconductor 、 Electron cyclotron resonance 、 Materials science 、 Annealing (metallurgy) 、 Silicon
摘要: We present in this article a comprehensive study of rapid thermal annealing (RTA) effects on the physical properties SiNx:H thin films deposited by electron cyclotron resonance plasma method. Films different as-deposited compositions (defined as nitrogen to silicon ratio, x=N/Si) were analyzed: from Si-rich (x=0.97) N-rich (x=1.6) films. The evolution composition, bonding configuration, and paramagnetic defects with temperature are explained means network bond reactions that take place depending film composition. All analyzed release hydrogen, while near-stoichiometric (x=1.43) ones also lose upon annealing. These used make Al/SiNx:H/semiconductor devices Si, In0.53Ga0.47As, InP. After RTA treatments, electrical three SiNx:H/semiconductor interfaces can be explained, noting microstructural modifications experiences
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