Mos (Metal Oxide Semiconductor) Physics and Technology

摘要: Introduction. Field Effect. Metal Oxide Silicon Capacitor at Low Frequencies. Intermediate and High Extraction of Interface Trap Properties from the Conductance. Interfacial Nonuniformities. Experimental Evidence for Properties. Capacitance. Measurement Charges, Barrier Heights, Flatband Voltage. Charge Trapping in Oxide. Instrumentation Measuring Characteristics. Oxidation Silicon--Oxidation Kinetics. Silicon--Technology. Control Charges. Models Interface. Appendices. Subject Index. Symbol