Electronic and Optical Properties of Silicon Dangling-Bond Defects at the Si-Sio2 Interface
作者： N. M. Johnson
DOI: 10.1007/978-1-4899-0774-5_34
关键词:
摘要: The Si-SiO2 interface possesses residual electronic defects that are characteristic of the thermal oxidation silicon. These contribute bands interfacial gap states and paramagnetic. This paper reviews current understanding optical properties these technologically-relevant defects.
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