Spin‐dependent recombination in irradiated Si/SiO2 device structures
作者： R. L. Vranch , B. Henderson , M. Pepper
DOI: 10.1063/1.99192
关键词:
摘要: We report studies of spin‐dependent recombination at the Si/SiO2 interface in electron irradiated (100) and (111) p‐channel metal‐oxide‐silicon field‐effect transistors wafers. Electron spin resonance transitions on Pb center increase current by 2–3 parts 104. The results are interpreted using a model involving electrons holes centers with which they spatially correlated.
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