Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy
作者： L. H. Li , Z. Pan , Y. Q. Xu , Y. Du , Y. W. Lin
DOI: 10.1063/1.1367276
关键词: Optoelectronics 、 Quantum well 、 Photoluminescence 、 Annealing (metallurgy) 、 Superlattice 、 Analytical chemistry 、 Band gap 、 Molecular beam epitaxy 、 Epitaxy 、 Blueshift
摘要: Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy were studied. Photoluminescence measurements a series samples with different well widths N compositions used to evaluate the effects. The intermixing GaNAs GaAs layers was clearly enhanced presence SiO2-cap layer. However, it strongly dependent composition. After at 900 degreesC for 30 s, blueshift up 62 meV observed SiO2-capped region sample composition 1.5%, whereas only small 26 exhibited bare region. For 3.1%, nearly identical photoluminescence peak energy shift both observed. It is suggested that mainly dominated layer induced defects-assisted diffusion smaller composition, while increasing assisted interior defects become predominant. (C) 2001 American Institute Physics.
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