Structural changes during annealing of GaInAsN

摘要: The alloy GaInAsN has great potential as a lower-band-gap material lattice matched to GaAs, but there is little understanding of what causes its poor optoelectronic properties and why these improve with annealing. This study provides information about the structural changes that occur when annealed. Fourier transform infrared spectra exhibit two primary features: triplet at ∼470 cm−1 (Ga–N stretch) or three bands ∼3100 (N–H stretch). change in Ga–N stretch absorption can be explained if nitrogen environment converted from NGa4 NInGa3 after N–H also changed annealing, implying second, unrelated, change.