InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
作者： Steven R. Kurtz , A. A. Allerman , E. D. Jones , J. M. Gee , J. J. Banas
DOI: 10.1063/1.123105
关键词:
摘要: … predicted for 1.0 eV band gap InGaAsN solar cells. In summary, we have described the design, MOCVD growth, and processing of an InGaAsN solar cell with improved performance. …
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sci-hub.se 参考文章(4)
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