The growth of infrared antimonide-based semiconductor lasers by metal-organic chemical vapor deposition
作者： R. M. Biefeld , A. A. Allerman , S. R. Kurtz , E. D. Jones , I. J. Fritz
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摘要: We describe the metal-organic chemical vapor deposition (MOCVD) growth of InAsSb/InAs and GaAsSb/GaAs(P) multiple quantum well (MQW) InAsSb/InAsP InAsSb/InPSb strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. also initial characterization GaAsSbN/GaAs MQW structures. By changing layer thickness composition InAsSb SLSs MQWs, we have prepared structures with low temperature (<20 K) photoluminescence wavelengths ranging from 3.2 to 6.0μ m. made gain-guided, injection lasers using undoped, p-type AlAs0.16Sb0.84 optical confinement both strained InPSb SLS regions. The LEDs utilize semi-metal properties a p-GaAsSb/n-InAs heterojunction as source electrons injected into Cascaded, semi-metal, mid-infrared, pseudomorphic region are reported. report on emitting at 1.1 1.2 μm grown GaAs substrates AlGaAs layers confinement.
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