The preparation of InAs1−xSbx alloys and strained-layer superlattices by MOCVD

摘要: Epitaxial layers of InAs1−xSbx (0.0⩽x⩽1.0) have been prepared by MOCVD in a vertical, atmospheric pressure quartz reaction chamber. Trimethylindium (TMI), trimethylantimony (TMSb), and arsine H2 were used as the source materials. The best surface morphologies sharpest X-ray patterns obtained for growth temperature 475°C, TMI/(TMSb+AsH3) molar ratio equal to 1.00, rate less than 1.0μ/h. efficiencies InSb at 475°C are 3500 2000 μ/mol In, respectively. rates found be thermally activated. solid composition ternary can predicted thermodynamic model from starting partial pressures reactants. Strained-layer superlattices (SLS's) type purge/growth technique. SLS's characterized optical microscopy, diffraction transmission electron microscopy. presence residual tension between superlattice buffer layer or substrate result formation microcracks misfit dislocations. Residual defects on also These dislocations minimized growing top step graded which eliminates microcracks.