Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots
作者： T. Taliercio , P. Valvin , R. Intartaglia , V. Sallet , J. C. Harmand
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摘要: We present a study of the optical properties quantum dots based on new family semiconductors: III-V dilute nitrides such as (In,Ga)(N,As). Continuous wave and time resolved photoluminescence (PL) experiments allowed us to evaluate impact N incorporation during growth InAs/GaAs dots. Previous work [V. Sallet et al., be submitted J. Cryst. Growth (2005); O. Schumann Appl. Phys. 96, 2832 (2004)] showed that increasing flux atoms into chamber modifies drastically size which leads bimodal growth. Two populations with different sizes appear. The dot PL line broadens second appears at higher energy. Time allows identify nature this line: population A decay is observed we interpret being consequence perturbation electronic states
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sci-hub.se 参考文章(13)
P. K. Basu, Theory of optical processes in semiconductors : bulk and microstructures Clarendon Press. ,(2003) , 10.1093/ACPROF:OSO/9780198526209.001.0001
M. Kuroda, A. Nishikawa, R. Katayama, K. Onabe, Growth and characterization of InAsN alloy films and quantum wells Journal of Crystal Growth. ,vol. 278, pp. 254- 258 ,(2005) , 10.1016/J.JCRYSGRO.2005.01.075
TK Ng, SF Yoon, SZ Wang, L-H Lin, Y Ochiai, T Matsusue, None, Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics Journal of Applied Physics. ,vol. 94, pp. 3110- 3114 ,(2003) , 10.1063/1.1601297
R. Intartaglia, T. Taliercio, P. Valvin, B. Gil, T. Bretagnon, P. Lefebvre, M.-A. Pinault, E. Tournié, Isoelectronic traps in heavily doped GaAs:(In,N) Physical Review B. ,vol. 68, pp. 235202- ,(2003) , 10.1103/PHYSREVB.68.235202
WK Loke, SF Yoon, SZ Wang, TK Ng, WJ Fan, None, Rapid thermal annealing of GaNxAs1-x grown by radio-frequency plasma assisted molecular beam epitaxy and its effect on photoluminescence Journal of Applied Physics. ,vol. 91, pp. 4900- 4903 ,(2002) , 10.1063/1.1454193
Susumu Nishio, Atsushi Nishikawa, Ryuji Katayama, Kentaro Onabe, Yasuhiro Shiraki, RF-MBE growth of InAsN layers on GaAs (0 0 1) substrates using a thick InAs buffer layer Journal of Crystal Growth. ,vol. 251, pp. 422- 426 ,(2003) , 10.1016/S0022-0248(02)02220-0
W. Shan, W. Walukiewicz, J. W. Ager, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, S. R. Kurtz, Band Anticrossing in GaInNAs Alloys Physical Review Letters. ,vol. 82, pp. 1221- 1224 ,(1999) , 10.1103/PHYSREVLETT.82.1221
X. Q. Zhang, S. Ganapathy, I. Suemune, H. Kumano, K. Uesugi, Yoichi Nabetani, Takashi Matsumoto, Improvement of InAs quantum-dot optical properties by strain compensation with GaNAs capping layers Applied Physics Letters. ,vol. 83, pp. 4524- 4526 ,(2003) , 10.1063/1.1629803
J.-Y. Duboz, J. A. Gupta, M. Byloss, G. C. Aers, H. C. Liu, Z. R. Wasilewski, Intersubband transitions in InGaNAs/GaAs quantum wells Applied Physics Letters. ,vol. 81, pp. 1836- 1838 ,(2002) , 10.1063/1.1500434
T. Taliercio, R. Intartaglia, B. Gil, P. Lefebvre, T. Bretagnon, U. Tisch, E. Finkman, J. Salzman, M.-A Pinault, M. Laügt, E. Tournié, From GaAs:N to oversaturated GaAsN: Analysis of the band-gap reduction Physical Review B. ,vol. 69, pp. 073303- ,(2004) , 10.1103/PHYSREVB.69.073303