Photoluminescence from InAsN quantum dots embedded in GaInNAs/GaAs quantum wells
作者： M. Motyka , R. Kudrawiec , G. Sęk , J. Misiewicz , D. Bisping
DOI: 10.1063/1.2745122
关键词:
摘要: Photoluminescence (PL) from InAsN quantum dots embedded in a GaInNAs/GaAs well (QW) has been investigated at low excitation conditions the temperature range of 15–305 K. A very efficient emission 1.3 μm with small spectral broadening (30 meV) observed room for this system. The intensity decreases by only two decades whole range. Carrier escape into states surrounding QW recognized as main PL thermal quenching mechanism and possible via defect appeared to be negligible regime excitation.
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