Self-assembled InAs quantum dots in an InGaAsN matrix on GaAs
作者： A.Yu. Egorov , D. Bedarev , D. Bernklau , G. Dumitras , H. Riechert
DOI: 10.1002/(SICI)1521-3951(200104)224:3<839::AID-PSSB839>3.0.CO;2-U
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摘要: Self-assembled InAs quantum dots (QDs) are fabricated in In 0.03 Ga 0.97 As 0.99 N 0.01 and 0.06 0.94 0.98 0.02 matrices on GaAs by solid source molecular beam epitaxy. The influence of average layer thickness matrix material photoluminescence properties studied. We observe a peak wavelength up to 1.49 μm from structures with nominal four monolayers (ML). For QD emitting at 1.3 μm, no saturation ground state luminescence excited detected. This should lead an improved performance dot lasers GaAs.
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