Effect of incorporating an InAlAs layer on electron emission in self-assembled InAs quantum dots
作者： J. F. Chen , R. S. Hsiao , M. F. Hsieh , J. S. Wang , J. Y. Chi
DOI: 10.1063/1.2150258
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摘要: We perform capacitance-voltage and admittance spectroscopy to investigate the effect of incorporating an InAlAs layer before InGaAs cap on electron emission in self-assembled InAs quantum dots (QDs). show that this incorporation a high potential barrier increases time electrons thermally activated from QD ground first excited state. The energy separation between states conduction band 57.2 79.1, 89.2, 95.6 meV with increasing thickness 0 10, 14, 20 A. Combining photoluminescence (PL) data, ratios valence are determined be 7.3:2.7 7.8:2.2 for 10 A InAlAs, respectively. In addition, is shown blueshift PL state much larger than
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