Growth and optical characterization of InAsN quantum dots
作者： H. Tsurusawa , A. Nishikawa , R. Katayama , K. Onabe
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摘要: Self-assembled InAsN quantum dots (QDs) have been grown by rf-plasma-assisted molecular beam epitaxy (RF-MBE) on GaAs(001) substrates via a 2-monolayer (ML)-thick InAs wetting layer. The QDs are typically 30-70 nm in diameter and 3-7 height. dot density was 3.6 × 10 9 -2.3 1010 cm -2 for the fluxes corresponding to nominal thicknesses of 3.0-4.0 MLs. As thickness increases, while decreases. low-temperature (10 K) photoluminescence (PL) QD samples shows emission spectra wavelength range 1.2-1.6 μm apparently caused N incorporation (0.8-2.0%) into QDs. size distribution causes broad spectra.
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