Growth and characterization of InAsN alloy films and quantum wells

摘要: Abstract Bulk InAsN films and monolayer-InAsN/GaAs single quantum wells (SQWs) have been grown on GaAs(0 0 1) substrates at 500 °C or below by RF-plasma-assisted molecular beam epitaxy (RF-MBE). with fairly uniform compositions as revealed X-ray diffraction successfully obtained up to the N concentration high 5.48%. The incorporation is enhanced decreasing growth temperature expected for metastable alloy. Burstein–Moss effect dominant optical properties near band edge in bulk films, giving a blue-shift of absorption due degenerate electrons conduction band. In InAsN/GaAs SQWs, however, BM well suppressed show red-shift photoluminescence (PL) peak energy bandgap narrowing incorporation, which manifestation huge bowing commonly found III–V–N-type alloys. This interpretation justified when difference shape density-of-states (DOS) function between SQW properly taken into account.