Room temperature photoluminescence at 4.5μm from InAsN
作者： Q. Zhuang , A. M. R. Godenir , A. Krier , K. T. Lai , S. K. Haywood
DOI: 10.1063/1.2896638
关键词:
摘要: Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy was investigated as a function of growth conditions. Reduced rate, temperature, and arsenic flux significantly enhance the nitrogen incorporation. Optimal conditions allowed us to obtain high quality with composition up 2.5%. The exhibit intense 4K photoluminescence (PL) double-peak features, which were attributed free carrier recombination localized recombination. Strong room temperature PL emission wavelength 4.5μm is obtained.
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