Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys

作者: R. Kudrawiec , J. Misiewicz , Q. Zhuang , A. M. R. Godenir , A. Krier

DOI: 10.1063/1.3117239

关键词:

摘要: Photoreflectance spectroscopy has been applied to study the energy gap and spin-orbit splitting in InNAs alloys with nitrogen concentration changing from 0% 0.88%. It observed that of decreases increase (about 60 meV per 1% nitrogen) but almost does not change. shows atoms influence mainly conduction band, i.e., shift this band toward valence band. The bowing parameter for determined be 7.3 +/- 0.6 -0.7 0.4 eV, respectively.©2009 American Institute Physics

参考文章(21)
Mohamed Henini, None, Dilute nitride semiconductors Elsevier. ,(2005)
J. Misiewicz, R. Kudrawiec, G. Sek, Photo- and Electro-reflectance of III–V-N Compounds and Low Dimensional Structures Dilute Nitride Semiconductors. pp. 279- 324 ,(2005) , 10.1016/B978-008044502-1/50009-3
W. K. Hung, K. S. Cho, M. Y. Chern, Y. F. Chen, D. K. Shih, H. H. Lin, C. C. Lu, T. R. Yang, Nitrogen-induced enhancement of the electron effective mass in InNxAs1−x Applied Physics Letters. ,vol. 80, pp. 796- 798 ,(2002) , 10.1063/1.1436524
H. Benaissa, A. Zaoui, M. Ferhat, First principles calculations for dilute InAs1−xNx alloys Journal of Applied Physics. ,vol. 102, pp. 113712- ,(2007) , 10.1063/1.2821144
N. Gonzalez Szwacki, P. Bogusławski, GaAs:N vs GaAs:B alloys: Symmetry-induced effects Physical Review B. ,vol. 64, pp. 161201- ,(2001) , 10.1103/PHYSREVB.64.161201
M. Kuroda, A. Nishikawa, R. Katayama, K. Onabe, Growth and characterization of InAsN alloy films and quantum wells Journal of Crystal Growth. ,vol. 278, pp. 254- 258 ,(2005) , 10.1016/J.JCRYSGRO.2005.01.075
R. Kudrawiec, T. Suski, J. Serafińczuk, J. Misiewicz, D. Muto, Y. Nanishi, Photoreflectance of InN and InN:Mg layers: An evidence of Fermi level shift toward the valence band upon Mg doping in InN Applied Physics Letters. ,vol. 93, pp. 131917- ,(2008) , 10.1063/1.2995989
Q. Zhuang, A. M. R. Godenir, A. Krier, K. T. Lai, S. K. Haywood, Room temperature photoluminescence at 4.5μm from InAsN Journal of Applied Physics. ,vol. 103, pp. 063520- ,(2008) , 10.1063/1.2896638
I. Vurgaftman, J. R. Meyer, Band parameters for nitrogen-containing semiconductors Journal of Applied Physics. ,vol. 94, pp. 3675- 3696 ,(2003) , 10.1063/1.1600519