Molecular beam epitaxial (MBE) growth and spectroscopy of dilute nitride InAsN:Sb for mid-infrared applications
作者： Q. Zhuang , A. Krier
DOI: 10.1049/IET-OPT.2009.0034
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摘要: The molecular beam epitaxial (MBE) growth and spectroscopy of dilute nitride InAsN: Sb epilayers are presented. Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted MBE was investigated as a function of growth conditions. High-quality InAsN epilayers containing up to 2.5% nitrogen were successfully grown using optimal growth conditions. The optical properties of InAsN were studied by photoluminescence (PL). Intense PL emission at 4 K was observed with double-peak …
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