The influence of substrate temperature on InAsN quantum dots grown by molecular beam epitaxy.
作者： J F Fälth , S F Yoon , E A Fitzgerald
DOI: 10.1088/0957-4484/19/45/455606
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摘要: The effect of substrate temperature, 390–480 °C, during molecular beam epitaxy growth InAsN quantum dots has been studied. dot formation was studied in situ, and it is shown that the are close to fully relaxed within 4 monolayers (ML) deposition. Further, indium concentration estimated be 84%, 67%, 55% 31% for ML thick grown at 390, 420, 450 480 respectively. Thus, Ga incorporation demonstrated all temperatures. diameter height increased from 23 38 nm, 2.5 8.9 respectively, when temperature 390 °C. 5 K photoluminescence intensity wavelength both with temperature.
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