Formation of low-dimensional structures in the InSb/AlAs heterosystem
作者： D. S. Abramkin , A. K. Bakarov , M. A. Putyato , E. A. Emelyanov , D. A. Kolotovkina
DOI: 10.1134/S1063782617090020
关键词: Y alloy 、 Layer (electronics) 、 Transmission electron microscopy 、 Molecular beam epitaxy 、 Atomic layer epitaxy 、 Materials science 、 Optoelectronics 、 Epitaxy 、 Heterojunction 、 Photoluminescence
摘要: Low-dimensional quantum-well and nanoisland heterostructures formed in the InSb/AlAs system by molecular-beam epitaxy are studied transmission electron microscopy steady-state photoluminescence spectroscopy. The structures grown under conditions of alternate In Sb deposition (the socalled atomic-layer mode) simultaneous materials traditional molecularbeam mode). both modes growth, at a nominal amount deposited material single layer, large-sized (200 nm–1 μm) imperfect islands arranged on x Al1 – y As1–y layer formed. atomic epitaxy, surrounded ring-shaped arrays much smaller (~10 nm), coherently strained consisting As1 alloy as well. composition is defined intermixing Group-V stage InSb because segregation atoms during overgrowth an AlAs layer.
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