Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates
作者： D. S. Abramkin , T. S. Shamirzaev
DOI: 10.1134/S1063782619050026
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摘要: Type-I indirect-gap heterostructures are convenient objects for studying the spin dynamics of localized excitons, which difficult to investigate in other types. It is shown that structures with such an energy spectrum can be formed from III–V binary compounds on substrates (110) orientation. The effect strain distribution and conduction-band structure quasimomentum space electronic states discussed.
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