Formation and crystal structure of GaSb/GaP quantum dots
作者： D. S. Abramkin , E. A. Emelyanov , M. A. Putyato , A. K. Gutakovskii , A. S. Kozhukhov
DOI: 10.3103/S1062873816010032
关键词:
摘要: The atomic structure of GaSb/GaP quantum dots grown via molecular beam epitaxy on a (100) GaP surface at temperatures 420–470°C is investigated. It established that, depending morphology the growth surface, deposition 1 ML GaSb leads to formation strained Ga(Sb, P)/GaP or fully relaxed dots. obtained heterostructures exhibit high photoluminescence efficiency.
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