Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence
作者： Chiung-Chih Hsu , Ray-Quen Hsu , Yue-Han Wu , Tung-Wei Chi , Chen-Hao Chiang
DOI: 10.1016/J.ULTRAMIC.2008.04.098
关键词:
摘要: Quantum dots (QDs) have great potential in optical fiber communication applications were widely recognized. The structure of molecular beam epitaxy (MBE) grew InAsN QDs investigated by transmission electron microscopy (TEM) and measured their properties photoluminescence (PL). TEM images show that the are irregular or oval shaped. Some observed to defects, such as dislocations at near surface contrast InAs QDs, which appear be defect free. PL results for showed a red-shifted emission peak. In addition, peak is broader than supports observation size distribution more random QDs. addition nitrogen leads decrease average bring changes QD's shape, compositional distribution, properties.
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elsevier.com参考文章(13)
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