作者: Takeru Amano , Takeyoshi Sugaya , Kazuhiro Komori
DOI: 10.1063/1.2372593
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摘要: The authors realized a five-layered 1.3 μ m InAs quantum dot (QD) with a high density and uniformity of 8.0× 10 10 cm− 2/sheet and 23 meV, respectively, by employing an As 2 source and a gradient-composition strain reducing layer. Further, the authors demonstrated the 1.3 μ m wavelength emission of this five-layered QD laser with a 0.5 mm cavity length and cleaved facet at room temperature. Moreover, the authors could achieve a high modal gain of 43 cm− 1 at 1.3 μ m because of the high density and uniformity of the QDs.