Characteristics of 1.3μm quantum-dot lasers with high-density and high-uniformity quantum dots

作者: Takeru Amano , Takeyoshi Sugaya , Kazuhiro Komori

DOI: 10.1063/1.2372593

关键词:

摘要: The authors realized a five-layered 1.3 μ m InAs quantum dot (QD) with a high density and uniformity of 8.0× 10 10 cm− 2/sheet and 23 meV, respectively, by employing an As 2 source and a gradient-composition strain reducing layer. Further, the authors demonstrated the 1.3 μ m wavelength emission of this five-layered QD laser with a 0.5 mm cavity length and cleaved facet at room temperature. Moreover, the authors could achieve a high modal gain of 43 cm− 1 at 1.3 μ m because of the high density and uniformity of the QDs.

参考文章(14)
Y. Miyamoto, Y. Miyake, M. Asada, Y. Suematsu, Threshold current density of GaInAsP/InP quantum-box lasers IEEE Journal of Quantum Electronics. ,vol. 25, pp. 2001- 2006 ,(1989) , 10.1109/3.35225
M. Asada, Y. Miyamoto, Y. Suematsu, Gain and the threshold of three-dimensional quantum-box lasers IEEE Journal of Quantum Electronics. ,vol. 22, pp. 1915- 1921 ,(1986) , 10.1109/JQE.1986.1073149
Michael Mittelstein, Yasuhiko Arakawa, Anders Larsson, Amnon Yariv, Second quantized state lasing of a current pumped single quantum well laser Applied Physics Letters. ,vol. 49, pp. 1689- 1691 ,(1986) , 10.1063/1.97267
Kenichi Nishi, Hideaki Saito, Shigeo Sugou, Jeong-Sik Lee, A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates Applied Physics Letters. ,vol. 74, pp. 1111- 1113 ,(1999) , 10.1063/1.123459
D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, D. G. Deppe, 1.3 μm room-temperature GaAs-based quantum-dot laser Applied Physics Letters. ,vol. 73, pp. 2564- 2566 ,(1998) , 10.1063/1.122534
Takeru Amano, Takeyoshi Sugaya, Shohgo Yamauchi, Kazuhiro Komori, Realization of 1.3 μm InAs quantum dots with high-density, uniformity, and quality Journal of Crystal Growth. ,vol. 295, pp. 162- 165 ,(2006) , 10.1016/J.JCRYSGRO.2006.08.004
Takeyoshi Sugaya, Takeru Amano, Kazuhiro Komori, Improved optical properties of InAs quantum dots grown with an As2 source using molecular beam epitaxy Journal of Applied Physics. ,vol. 100, pp. 063107- ,(2006) , 10.1063/1.2352809
Takeyoshi Sugaya, Kazuhiro Komori, Shougo Yamauchi, Takeru Amano, 1.3μm InAs quantum dots grown with an As2 source using molecular-beam epitaxy Journal of Vacuum Science & Technology B. ,vol. 23, pp. 1243- 1246 ,(2005) , 10.1116/1.1913672
Y. Arakawa, H. Sakaki, Multidimensional quantum well laser and temperature dependence of its threshold current Applied Physics Letters. ,vol. 40, pp. 939- 941 ,(1982) , 10.1063/1.92959