Realization of 1.3 μm InAs quantum dots with high-density, uniformity, and quality
作者： Takeru Amano , Takeyoshi Sugaya , Shohgo Yamauchi , Kazuhiro Komori
DOI: 10.1016/J.JCRYSGRO.2006.08.004
关键词:
摘要: Abstract We propose a 1.3 μm high-density InAs quantum dot (QD) structure for optical devices that uses an As2 source and gradient composition strain reducing layer (GC-SRL). The temperature dependence of the photoluminescence (PL) peak intensity increase from 11 K to room was very low at 1 3 . Moreover, PL ten times greater than low-density QDs because in QD number, although bandwidth same. For first time, we realized with high-density, uniformity, quality. This is promising result since exceeding on GaAs substrate are useful fiber communications.
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