Growth of high-density InGaSb quantum dots on silicon atoms irradiated GaAs substrates
作者： Naokatsu Yamamoto , Kouichi Akahane , Naoki Ohtani
DOI: 10.1016/J.PHYSE.2003.11.015
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摘要: Abstract We discuss a technique that allows us to grow high-density GaSb and InGaSb quantum dots (QDs) on (0 0 1)-oriented GaAs substrates. study the use of Si atom irradiation substrate surface as an anti-surfactant before QDs fabrication. It is clear densities are drastically enhanced with irradiation. Photoluminescence intensities from these also increased These results indicate useful improve properties Sb-based QDs.
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