Intersubband transitions in InGaNAs/GaAs quantum wells
作者： J.-Y. Duboz , J. A. Gupta , M. Byloss , G. C. Aers , H. C. Liu
DOI: 10.1063/1.1500434
关键词:
摘要: Intersubband transitions are observed in InGaNAs/GaAs quantum wells at wavelengths around 10 μm. The transition energies correlated with interband measured the near infrared. Clear selection rules observed: is TM polarized. amplitude of absorption consistent an increase electron effective mass as N content increases.
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