Intersubband transition in narrow GaInNAs∕GaAs quantum wells
作者： H. C. Liu , C. Y. Song , J. A. Gupta , G. C. Aers
DOI: 10.1063/1.2405890
关键词:
摘要: The authors report on experimental results of intersubband absorption in a set Ga0.77In0.23N0.01As0.99∕GaAs quantum well structures with different widths from 2.6to4.4nm. Due to the peculiar conduction band dispersion, observed transition energy is quite insensitive width for these narrow wells. resonance positions are good agreement model calculation.
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