Intersubband transitions in dilute (In,Ga)(As,N)/(Al,Ga)As multiple quantum wells analyzed within a three-band k-p model
作者： M. Giehler , R. Hey , P. Kleinert , H. T. Grahn
DOI: 10.1103/PHYSREVB.73.085322
关键词: Condensed matter physics 、 Absorption (electromagnetic radiation) 、 Absorption spectroscopy 、 Heterojunction 、 Semiconductor laser theory 、 Blueshift 、 Absorption band 、 Quantum well 、 Materials science 、 Redshift
摘要: We study the influence of nitrogen N on intersubband absorption spectra dilute In,Ga As,N / Al,Ga As multiple quantum wells MQWs . For with 6 nm well width and Al0.33Ga0.67As barriers, main band at 1365 cm −1 exhibits increasing content a slight redshift in contrast to an expected blueshift, remarkable decrease intensity, strong asymmetric broadening high-frequency side. In addition, minor feature appears 3 Al0.42Ga0.58As 1820 cm−1 decreasing low-frequency side, which cannot be attributed transition by only taking into account effect discontinuity conduction edges MQWs. analyze energies within three-band k ·p band-anticrossing model for heterostructures. Because presence localized state well, set N-like states is formed each due confinement. These couple original states, mixed subbands are formed. The dependence calculated wave numbers bound-to-bound as bound-to-continuum transitions good agreement experimental data.
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