Photocurrent spectroscopy of intersubband transitions in GaInAsN/(Al)GaAs asymmetric quantum well infrared photodetectors
作者： Asaf Albo , Dan Fekete , Gad Bahir
DOI: 10.1063/1.4754573
关键词:
摘要: We have studied the conduction band electronic level structure of GaInAsN/(Al)GaAs-based quantum well (QW) infrared photodetectors using intersubband photocurrent (PC) spectroscopy and dark current analysis. Photoluminescence absorption were carried out as complementary spectroscopic techniques. Based on observed transition energy, we associated peaks with electron excitations from bound states in wells to quasi-bound continuum. A good agreement experimental results was obtained a 10-band k · p model that took into account inhomogeneous distribution nitrogen atoms along well's growth direction.
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