作者: D J Newson , A Kurobe
DOI: 10.1088/0268-1242/3/8/009
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摘要: The authors have theoretically treated the effect of conduction band non-parabolicity on inter-sub-band absorption in doped semiconductor quantum wells. derived an analytical expression for at zero temperature. peak is shifted to lower energies and height reduced by non-parabolicity. These effects are small GaAs-based wells, but may be detrimental InGaAs