The effect of dilute nitrogen on nonlinear optical properties of the InGaAsN/GaAs single quantum wells
作者： K. Köksal , M. Şahin
DOI: 10.1140/EPJB/E2012-30547-6
关键词:
摘要: In this study, we investigate the linear and third order nonlinear optical properties of InGaAsN/GaAs depending on nitrogen content laser dressing parameter. As theoretical models, band anticrossing model solid theory are used. to obtain electronic quantum well, finite difference method is The beam affects well by changing shape confinement potential. This modification potential determined By using dilute amount nitrogen, conduction depth can be controlled. strain which introduced due presence compensated indium atoms. structure obtained.
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