Molecular beam epitaxy growth of 1.55 μm GaInNAs(Sb) double quantum wells with bright and narrow photoluminescence

摘要: Abstract GaInNAs(Sb)/GaNAs double quantum well (DQW) structures were grown on GaAs substrates using solid-source molecular beam epitaxy with N 2 /Ar gas mixtures in a radio frequency plasma cell. A novel method of situ antimony mass spectrometry is introduced which permits flux monitoring the presence large arsenic background pressures. For DQW sample without Sb, bright and narrow (38.1 meV) room temperature photoluminescence (PL) emission at 1509 nm was achieved after optimized rapid thermal annealing. In two samples fluxes approximately 0.012 0.028 monolayers/s PL intensity improved very observed 1518 1551 nm linewidths 33.1 35.0 meV, respectively. The integrated intensities each these equivalent to for reference GaInNAs/GaAs emitting closer 1.3 μ m . More strikingly, Sb-free only lower by factor 2. This suggests that approach has benefits material quality, as providing efficient control, yielding good even Sb. High-resolution X-ray diffraction transmission electron microscopy measurements indicate excellent crystal quality all samples. Secondary ion reveals dramatic tendency Sb segregation during growth, resulting asymmetric incorporation most atoms located top interface.