The role of Sb in the MBE growth of (GaIn)(NAsSb)
作者： Kerstin Volz , Vincent Gambin , Wonill Ha , Mark A. Wistey , Homan Yuen
DOI: 10.1016/S0022-0248(02)02198-X
关键词: Thin film 、 Mineralogy 、 Alloy 、 Luminescence 、 Band gap 、 Epitaxy 、 Molecular beam epitaxy 、 Crystal 、 Optoelectronics 、 Chemistry 、 Nitride
摘要: Abstract (GaIn)(NAs) can be grown pseudomorphically strained on GaAs with a very small band gap, opening up the possibility of achieving 1.3 or even 1.55 μm emission; however, wavelengths are actually limited by N solubility limit and high In strain limit. By adding Sb to quaternary we have observed remarkable shift towards longer luminescent wavelengths, while maintaining good crystal quality. The growth this now five-component system poses several challenges in regards epitaxial compositional characterization. present paper elucidates role as an alloy constituent well surfactant pentanary alloy. changes material resulting from addition will shown.
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sci-hub.se 参考文章(11)
S. Sato, Y. Osawa, T. Saitoh, I. Fujimura, Room-temperature pulsed operation of 1.3 [micro sign]m GaInNAs/GaAs laser diode Electronics Letters. ,vol. 33, pp. 1386- 1387 ,(1997) , 10.1049/EL:19970935
T. Jang, L. M. Porter, G. W. M. Rutsch, B. Odekirk, Tantalum carbide ohmic contacts to n-type silicon carbide Applied Physics Letters. ,vol. 75, pp. 3956- 3958 ,(1999) , 10.1063/1.125506
L. Bellaiche, Band gaps of lattice-matched (Ga,In)(As,N) alloys Applied Physics Letters. ,vol. 75, pp. 2578- 2580 ,(1999) , 10.1063/1.125083
Xiaodong Yang, MJ Jurkovic, JB Heroux, WI Wang, None, Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers Applied Physics Letters. ,vol. 75, pp. 178- 180 ,(1999) , 10.1063/1.124311
A. Wagner, C. Ellmers, F. Höhnsdorf, J. Koch, C. Agert, S. Leu, M. Hofmann, W. Stolz, W. W. Rühle, (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range Applied Physics Letters. ,vol. 76, pp. 271- 272 ,(2000) , 10.1063/1.125744
C. E. C. Wood, T. M. Kerr, T. D. McLean, D. I. Westwood, J. D. Medland, S. Blight, R. Davies, State‐of‐the‐art AlGaAs alloys by antimony doping Journal of Applied Physics. ,vol. 60, pp. 1300- 1305 ,(1986) , 10.1063/1.337300
W. Ha, V. Gambin, M. Wistey, S. Bank, H. Yuen, S. Kim, J.S. Harris, Jr., Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers Electronics Letters. ,vol. 38, pp. 277- 278 ,(2002) , 10.1049/EL:20020207
Su-Huai Wei, Alex Zunger, Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys Physical Review Letters. ,vol. 76, pp. 664- 667 ,(1996) , 10.1103/PHYSREVLETT.76.664
K. Volz, A. Hasse, A.K. Schaper, T.E. Weiric, F. Höhnsdorf, J. Koch, W. Stolz, Structural Investigations of (GaIn)(NAs)/GaAs Multi-Quantum-Wells by Transmission Electron Microscopy MRS Proceedings. ,vol. 618, pp. 291- 296 ,(2000) , 10.1557/PROC-618-291
A. Ramakrishnan, G. Steinle, D. Supper, C. Degen, G. Ebbinghaus, Electrically pumped 10 Gbit/s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region Electronics Letters. ,vol. 38, pp. 322- 324 ,(2002) , 10.1049/EL:20020226