Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers
作者： W. Ha , V. Gambin , M. Wistey , S. Bank , H. Yuen
DOI: 10.1049/EL:20020207
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摘要: The high demand for 1.3-1.55 /spl mu/m lasers has led to the investigation of GaInNAsSb/GaNAsSb on GaAs. In-plane operating out 1.49 mu/m, with threshold current density 930 A/cm/sup 2/ per quantum well and pulsed power up 70 mW, are presented. In addition, photoluminescence 1.6 from GaInNAsSb wells was observed.
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