Minority carrier diffusion, defects, and localization in InGaAsN with 2% nitrogen
作者： Steven R. Kurtz , A. A. Allerman , C. H. Seager , R. M. Sieg , E. D. Jones
DOI: 10.1063/1.126989
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摘要: … In this paper, we examine electron and hole transport in InGaAsN … is presently limited by InGaAsN material inhomogeneities, not a … In our high quality InGaAsN, we find that annealing …
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sci-hub.se 参考文章(16)
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