Probing the “Unusual” Band Structure of Dilute Ga(AsN) Quantum Wells by Magneto-Tunnelling Spectroscopy and Other Techniques
作者： A. Patanè , L. Eaves
DOI: 10.1016/B978-008044502-1/50008-1
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摘要: This chapter reviews recent investigations into the nature of electronic states in GaAsl-yNy quantum wells. The magneto-tunneling experiments allows to map out form unusual energy-wave-vector dispersion curves GaAs l-y N y that results from hybridization extended conduction band with a highly localized energy level associated isolated atoms. These measurements validate anti-crossing (BAC) model and complement optical spectroscopy hydrostatic pressure. conventional magneto-conductivity two-dimensional electrons confined Si-modulation doped 1-y has been explained modulation doping silicon (Si) is demonstrated value inhibited formation mononitride (Si-N) defects. electrical conductivity SdH effects over range electron carrier concentrations measured mobility up 0.2 m2/V s, consistent through leads well-defined k-vector for hybridized (y -0.1%) an energy.
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