Nitrogen-induced decrease of the electron effective mass in GaAs1−xNx thin films measured by thermomagnetic transport phenomena
作者： D. L. Young , J. F. Geisz , T. J. Coutts
DOI: 10.1063/1.1554777
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摘要: Thin films of GaAs1−xNx were grown on insulating GaAs substrates and subjected to temperature-dependent resistivity, Hall, Seebeck, Nernst coefficient measurements. Density states, effective-mass values, which are calculated from the transport data, decrease 0.084me 0.029me as x increases 0 0.004.
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