Transport properties of GaAs1−xNx thin films grown by metalorganic chemical vapor deposition
作者： R. K. Ahrenkiel , S. W. Johnston , B. M. Keyes , D. J. Friedman , S. M. Vernon
DOI: 10.1063/1.1328774
关键词: Infrared 、 Band gap 、 Gallium arsenide 、 Excitation 、 Thin film 、 Materials science 、 Stretched exponential function 、 Optoelectronics 、 Chemical vapor deposition 、 Photoconductivity
摘要: A series of devices with the structure GaAs/GaAs1−xNx/GaAs and 0.01
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sci-hub.se 参考文章(17)
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