Atomic ordering and temperature-dependent transient photoconductivity in Ga0.47In0.53As
作者： S. P. Ahrenkiel , S. W. Johnston , R. K. Ahrenkiel , D. J. Arent , M. C. Hanna
DOI: 10.1063/1.124152
关键词:
摘要: Influences of CuPtB atomic ordering on transient photoconductivity in epitaxial Ga0.47In0.53As films grown by metal-organic chemical vapor deposition are examined. Low-injection lifetimes several ms measured double-variant ordered samples at 77 K; these decrease rapidly with temperatures above 180 K, giving a thermal activation energy for recombination 0.19 eV. Single-variant exhibit typical 30–60 μs, no noticeable temperature dependence up to 300 K. Charge separation may be driven type-II band alignment between and disordered regions, or an alternating internal electrical polarization variants. Recombination both double- single-variant influenced inhibited transport across antiphase boundaries.
harvard.edu
scitation.org
aip.org
sci-hub.se 参考文章(15)
R. K. Ahrenkiel, R. Ellingson, S. Johnston, M. Wanlass, Recombination lifetime of In0.53Ga0.47As as a function of doping density Applied Physics Letters. ,vol. 72, pp. 3470- 3472 ,(1998) , 10.1063/1.121669
R. K. Ahrenkiel, S. P. Ahrenkiel, D. J. Arent, J. M. Olson, Carrier transport in ordered and disordered In0.53Ga0.47As Applied Physics Letters. ,vol. 70, pp. 756- 758 ,(1997) , 10.1063/1.118214
J. E. Fouquet, V. M. Robbins, S. J. Rosner, O. Blum, Unusual properties of photoluminescence from partially ordered Ga0.5In0.5P Applied Physics Letters. ,vol. 57, pp. 1566- 1568 ,(1990) , 10.1063/1.103355
M. C. DeLong, W. D. Ohlsen, I. Viohl, P. C. Taylor, J. M. Olson, Evidence for spatially indirect recombination in Ga0.52In0.48P Journal of Applied Physics. ,vol. 70, pp. 2780- 2787 ,(1991) , 10.1063/1.349364
D. J. Friedman, Jane G. Zhu, A. E. Kibbler, J. M. Olson, J. Moreland, Surface Topography and Ordering-Variant Segregation in GaInP2 Applied Physics Letters. ,vol. 63, pp. 1774- 1776 ,(1993) , 10.1063/1.110658
Sverre Froyen, Alex Zunger, A. Mascarenhas, Polarization fields and band offsets in GaInP/GaAs and ordered/disordered GaInP superlattices Applied Physics Letters. ,vol. 68, pp. 2852- 2854 ,(1996) , 10.1063/1.116346
A. Gomyo, T. Suzuki, K. Kobayashi, S. Kawata, I. Hino, T. Yuasa, Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy Applied Physics Letters. ,vol. 50, pp. 673- 675 ,(1987) , 10.1063/1.98062
Alex Zunger, D.M. Wood, Structural phenomena in coherent epitaxial solids Journal of Crystal Growth. ,vol. 98, pp. 1- 17 ,(1989) , 10.1016/0022-0248(89)90180-2
Tae‐Yeon Seong, A. G. Norman, G. R. Booker, A. G. Cullis, Atomic ordering and domain structures in metal organic chemical vapor deposition grown InGaAs (001) layers Journal of Applied Physics. ,vol. 75, pp. 7852- 7865 ,(1994) , 10.1063/1.356569
R. A. J. Thomeer, F. A. J. M. Driessen, L. J. Giling, Temperature dependence of photoluminescence lifetimes in ordered GaInP2 Applied Physics Letters. ,vol. 66, pp. 1960- 1962 ,(1995) , 10.1063/1.113290