An advanced technique for measuring minority-carrier parameters and defect properties of semiconductors
作者： R.K. Ahrenkiel , S.W. Johnston
DOI: 10.1016/S0921-5107(02)00639-6
关键词: Materials science 、 Semiconductor 、 Wafer 、 Measure (physics) 、 Diffusion (business) 、 Spectral response 、 Optoelectronics 、 Impurity 、 Photoconductivity 、 Characterization (materials science)
摘要: Abstract Rapid and contactless defect characterization is a very desirable goal in most current technologies. We will describe the contactless, resonant-coupled photoconductive decay (RCPCD) technique, as applied to variety of wafer thin-film materials. Using this we can measure recombination lifetime over many decades injection level. also relative values minority-carrier mobility diffusion length. By scanning excitation wavelength, spectral response spectra. Deep-level impurities be detected by several variations RCPCD. show general versatility technique.
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