Analysis of the main acceptor defect in p-type GaAsN grown by chemical beam epitaxy
作者： Omar Elleuch , Boussairi Bouzazi , Hiroyuki Kowaki , Kazuma Ikeda , Nobuaki Kojima
关键词: Chemical beam epitaxy 、 Acceptor 、 Valence band 、 Materials science 、 Diffusion capacitance 、 Doping 、 Analytical chemistry 、 Grown film 、 Annealing (metallurgy)
摘要: The properties of the main acceptor state in GaAsN crystal grown by chemical beam epitaxy (CBE) are studied based on changes carrier concentration and temperature dependence junction capacitance due to annealing. p-type films shows a significant increase between 50 80 K energy level defect as-grown film was obtained at 0.161 eV above valence band maximum. This decreases its density increases with annealing time. Therefore, this is not thermally stable structure electrical change mainly responsible for high background doping unintentionally doped CBE, since estimated using capacitance–temperature (C–T) measurements explain well room provided capacitance–voltage (C–V) results.
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